Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination |
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Authors: | R T Green W S Tan P A Houston T Wang P J Parbrook |
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Affiliation: | (1) Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, United Kingdom;(2) SHARP Laboratories of Europe, Oxford, OX4 4GB, United Kingdom |
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Abstract: | Dry etching of GaN-based devices can introduce damage onto exposed layers of the semiconductor. In this paper, electrode-less
wet etching of nominally undoped GaN is investigated in terms of light intensity, solution concentration, and mask geometry
in order to determine the conditions required to obtain smooth surface morphologies. Using the results, surfaces were etched
with a root-mean-squared (RMS) surface roughness of 1.7 nm. Furthermore, the etch selectivity is used to gain access to buried
p-type layers allowing n-p diodes to be fabricated. Contact resistances to the exposed p-type layers were found to be superior to those obtained by dry etching. |
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Keywords: | GaN wet etching dry etching |
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