Leakage mechanisms in the trench transistor DRAM cell |
| |
Authors: | Banerjee S. Coleman D. Jr. Richardson W. Shah A. |
| |
Affiliation: | Texas Instrum. Inc., Dallas, TX; |
| |
Abstract: | The authors discuss a band-to-band tunneling mechanism in the trench transistor cell (TTC), which is used in Texas Instruments' 4-Mbit DRAM. This effect should be operative in the class of trench cells in which the charge is stored inside the trench and the substrate forms a capacitor plate. This effect does not compromise the functionality of the cell; in fact, it has the potential of improving the long-term reliability of the cell by preventing electrical overstress of the trench capacitor oxide |
| |
Keywords: | |
|
|