Investigation of electrically active defects in amorphous barium titanate thin films |
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Authors: | F El Kamel P Gonon |
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Affiliation: | aLaboratory for Electrostatics and Dielectric Materials (LEMD), CNRS—25, avenue des Martyrs Grenoble 38042, France;bLaboratory for Materials, Organization and Properties (LabMOP), Campus Universitaire—El Manar, 2092 Tunis, Tunisia |
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Abstract: | DC and AC electrical properties of amorphous barium titanate thin film capacitors have been investigated as a function of temperature. A clear correlation is found between the temperature dependence of DC leakage currents and the temperature variation of the AC loss peaks, showing that these measurement techniques are probing the same electrical defects. Using either of these two techniques in amorphous barium titanate, we were able to detect oxygen vacancies diffusion with activation energy around 1 eV, and electron traps at 0.3 and 0.4 eV. |
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Keywords: | Active defects Space charge limited current DC and AC electrical properties BaTiO3 |
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