Accurate calculation of small-signal growth rates in avalanche diodes |
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Authors: | Wierich R.L. |
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Affiliation: | University College London, Department of Electronic & Electrical Engineering, London, UK; |
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Abstract: | The small-signal oscillation frequency and growth rate is calculated for an avalanche diode having a general doping profile, allowing for accurate drift velocity and ionisation rate. The analysis includes the case of a typical microwave load connected to the diode. A connection is found between this accurate growth rate and a properly defined Q factor for the whole circuit. |
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