| 缺陷相互作用对HfO2基阻变存储器件均匀性的影响：第一性原理研究 |
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| 引用本文： | 赵强,周茂秀,张伟,刘琦,李晓风,刘明,代月花.缺陷相互作用对HfO2基阻变存储器件均匀性的影响：第一性原理研究[J].半导体学报,2013,34(3):032001-6. |
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| 作者姓名： | 赵强 周茂秀 张伟 刘琦 李晓风 刘明 代月花 |
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| 作者单位： | School of Electronic and Information Engineering,Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences;Internet Network Information Center,Institutes of Physical Science,Chinese Academy of Sciences |
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| 摘 要： | The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO2 resistive random access memory（RRAM） devices is proposed from another perspective:defects interactions, based on first principle calculations.In doped HfO2,dopant is proved to have a localized effect on the formation of defects and the interactions between them.In addition,both effects cause oxygen vacancies（VO） to have a tendency to form clusters and these clusters are easy to form around the dopant.It is proved that this process can improve the performance of material through projected density of states（PDOS） analysis.For VO filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break.Therefore,improved uniformity and operation voltage of Al-doped HfjO2 RRAM devices is achieved.
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| 关 键 词： | RRAM hafnium oxide localized effect oxygen vacancy DFT |
| 收稿时间： | 7/8/2012 3:32:51 PM |
Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study |
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| Zhao Qiang,Zhou Maoxiu,Zhang Wei,Liu Qi,Li Xiaofeng,Liu Ming and Dai Yuehua.Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study[J].Chinese Journal of Semiconductors,2013,34(3):032001-6. |
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| Authors: | Zhao Qiang Zhou Maoxiu Zhang Wei Liu Qi Li Xiaofeng Liu Ming and Dai Yuehua |
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| Affiliation: | School of Electronic and Information Engineering, Anhui University, Hefei 230601, China;School of Electronic and Information Engineering, Anhui University, Hefei 230601, China;School of Electronic and Information Engineering, Anhui University, Hefei 230601, China;Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Internet Network Information Center, Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Electronic and Information Engineering, Anhui University, Hefei 230601, China |
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| Abstract: | The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO2 resistive random access memory (RRAM) devices is proposed from another perspective: defects interactions, based on first principle calculations. In doped HfO2, dopant is proved to have a localized effect on the formation of defects and the interactions between them. In addition, both effects cause oxygen vacancies (VO) to have a tendency to form clusters and these clusters are easy to form around the dopant. It is proved that this process can improve the performance of material through projected density of states (PDOS) analysis. For VO filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break. Therefore, improved uniformity and operation voltage of Al-doped HfO2 RRAM devices is achieved. |
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| Keywords: | RRAM hafnium oxide localized effect oxygen vacancy DFT |
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