| 0.9GHz和2.4GHz 双频段 SiGe HBT 低噪声放大器的设计 |
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| 引用本文： | 路志义,谢红云,霍文娟,张万荣. 0.9GHz和2.4GHz 双频段 SiGe HBT 低噪声放大器的设计[J]. 半导体学报, 2013, 34(2): 025002-5 |
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| 作者姓名： | 路志义 谢红云 霍文娟 张万荣 |
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| 作者单位： | College of Electronic Information and Control Engineering,Beijing University of Technology |
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| 基金项目： | 国家自然科学基金项目(61006044,60776051,61006059)；北京市自然科学基金项目(4082007，4122014)；北京市教委科技发展计划项目(KM200710005015,KM200910005001)；北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001)；北京市优秀跨世纪人才基金项目(67002013200301)。 |
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| 摘 要： | This paper presents design and implementation of a dual-band LNA using a 0.35μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications.PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic（EM） simulation.Design considerations of noise decoupling, input/output impedance matching,and current reuse are described in detail.At 0.9/2.4 GHz,gain and noise figure are 13/16 dB and 4.2/3.9 dB,respectively.Both S11 and S22 are below -10 dB.Power dissipation is 40 mW at 3.5 V supply.
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| 关 键 词： | current reuse dual-band emitter inductor EM simulation SiGe HBT |
| 修稿时间： | 2012-09-08 |
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA |
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| Lu Zhiyi,Xie Hongyun,Huo Wenjuan and Zhang Wanrong. 0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA[J]. Chinese Journal of Semiconductors, 2013, 34(2): 025002-5 |
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| Authors: | Lu Zhiyi Xie Hongyun Huo Wenjuan Zhang Wanrong |
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| Affiliation: | College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | |
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| Keywords: | current reuse dual-band emitter inductor EM simulation SiGe HBT |
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