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提取光栅耦合的高电子迁移率晶体管中的太赫兹辐射
引用本文:周宇,李欣幸,谭仁兵,薛伟,黄永丹,楼柿涛,张宝顺,秦华.提取光栅耦合的高电子迁移率晶体管中的太赫兹辐射[J].半导体学报,2013,34(2):022002-5.
作者姓名:周宇  李欣幸  谭仁兵  薛伟  黄永丹  楼柿涛  张宝顺  秦华
摘    要:借助于傅立叶光谱仪,在具有耦合光栅的高电子迁移率晶体管中观察到了波长在400um左右的微弱的太赫兹辐射。同时使用了一种调制探测技术,从而使得太赫兹辐射的绝对功率能够被提取计算出来。并且发现器件的太赫兹辐射功率正比于源漏电流,而黑体辐射功率则与器件电功率有密切关系。此外,太赫兹辐射对于源漏偏置电压及栅压的依赖性,说明太赫兹辐射是由加速电子与光栅的相互作用而引起的。

关 键 词:二维电子系统,史密斯-珀赛尔辐射,耦合光栅,高电子迁移率晶体管
收稿时间:7/2/2012 11:07:28 PM
修稿时间:9/24/2012 8:59:10 AM

Extraction of terahertz emission from a grating-coupled high-electron-mobilitytransistor
Zhou Yu,Li Xinxing,Tan Renbing,Xue Wei,Huang Yongdan,Lou Shitao,Zhang Baoshun and Qin Hua.Extraction of terahertz emission from a grating-coupled high-electron-mobilitytransistor[J].Chinese Journal of Semiconductors,2013,34(2):022002-5.
Authors:Zhou Yu  Li Xinxing  Tan Renbing  Xue Wei  Huang Yongdan  Lou Shitao  Zhang Baoshun and Qin Hua
Affiliation:Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;University of Chinese Academy of Sciences, Beijing 100049, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;i-Lab, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China
Abstract:
Keywords:two-dimensional electron system  Smith-Purcell radiation  grating coupler  high-electron-mobility transistor
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