| 基于纳米多晶硅薄膜晶体管磁传感器制作工艺和特性 |
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| 引用本文： | 赵晓锋,温殿忠,庄萃萃,曹靖雅,王志强.基于纳米多晶硅薄膜晶体管磁传感器制作工艺和特性[J].半导体学报,2013,34(3):036001-6. |
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| 作者姓名： | 赵晓锋 温殿忠 庄萃萃 曹靖雅 王志强 |
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| 作者单位： | Key Laboratory of Electronics Engineering,College of Heilongjiang Province,Heilongjiang University |
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| 基金项目： | 国家自然科学基金项目（61006057）；黑龙江省普通高等学校青年学术骨干教师支持计划项目（1251G046）；黑龙江大学杰出青年基金（JCL201007） |
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| 摘 要： | A magnetic field sensor based on nano-polysilicon thin films transistors（TFTs） with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity（ρ>500Ω·cm） silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when VDS = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.
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| 关 键 词： | nano-polysilicon TFT magnetic field sensor CMOS technology magnetic sensitivity heterojunction interfaces |
| 修稿时间： | 10/8/2012 9:21:27 AM |
Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors |
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| Zhao Xiaofeng,Wen Dianzhong,Zhuang Cuicui,Cao Jingya and Wang Zhiqiang.Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors[J].Chinese Journal of Semiconductors,2013,34(3):036001-6. |
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| Authors: | Zhao Xiaofeng Wen Dianzhong Zhuang Cuicui Cao Jingya and Wang Zhiqiang |
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| Affiliation: | Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China;Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China;Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China;Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China;Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China |
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| Abstract: | |
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| Keywords: | nano-polysilicon TFT magnetic field sensor CMOS technology magnetic sensitivity heterojunction interfaces |
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