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The effect of substrate temperature,deposition rate and annealing on the electrical resistivity of thin yttrium films
Authors:M. A. Angadi  P. V. Ashrit
Affiliation:(1) Department of Physics, The University of the West Indies, St. Augustine, Trinidad, West Indies;(2) Department of Physics, Karnatak University, 580 003 Dharwad, India;(3) Present address: Department of Physics, University of Moncton, E1A 3E9 New Brunswick, Canada
Abstract:The effect of substrate temperature, deposition rate and annealing on the electrical resistivity of thin yttrium films in the thickness range 10 to 80 nm is reported. The resistivity of films decreases at higher deposition rates and substrate temperatures. These experimental results are analysed using the Fuchs—Sondheimer and Mayadas—Shatzkes theories. The annealing behaviour of yttrium films is in agreement with the Vand theory.
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