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Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films |
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| Authors: | Mi-Hwa Lim Hyun-Suk Kim Nan-Young Kim Ho-Gi Kim Il-Doo Kim Seung Eon Moon Min-Hwan Kwak Han-Cheol Ryu Su-Jae Lee |
| Affiliation: | (1) Department of Materials and Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Daejeon, 305-701, South Korea;(2) Crystal Physics and Electroceramics Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA;(3) Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Kajeong, Yuseong, Daejeon, 305-350, South Korea |
| Abstract: | Highly (100) preferred undoped and 1–5% Ni-doped Ba1–xSrxTiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications. |
| Keywords: | BST Ni doping microwave interdigital capacitor |
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