蒸发速率对电子束蒸发法制备CdS薄膜性质影响

采用电子束蒸发法，以高纯CdS块料为膜料在玻璃基底上制备了CdS薄膜。利用X射线衍射仪和原子力显微镜表征其晶体结构和表面形貌，用四探针电阻测试仪和紫外可见分光光度计分析其电学及光学特性。结果表明，蒸发速率对薄膜结构及特性有显著影响，其中在蒸发速率为10?S-1制备的CdS薄膜均匀致密且其XRD衍射峰强度最大，薄膜的光电性能最好。这些CdS薄膜的光敏性达到7.7×102，其中亮电阻的最小值为1350Ω/□。

Influence of Evaporation Rate on the Properties of CdS Thin Films by Electron Beam Evaporation

CdS thin films were prepared by electron beam evaporation (EBE) method with using high pure blocky CdS on glass substrate. The crystal structure and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy;the optical and electrical properties of the films were analyzed by four probe resistance tester and ultraviolet visible spectrophotometer. The results showed that the evaporation rate had significant effects on the films structure and properties. The CdS films prepared at 10?S-1 were uniform and dense surface morphology and were presented the strongest peak intensities of the XRD patterns. The photoelectric properties were best. Moreover, the photo sensitiveness reached 7.7×102,the minimum light resistance was 1350Ω/□.