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红外与雷达复合隐身研究
引用本文:卢意红,吕绪良,胡江华. 红外与雷达复合隐身研究[J]. 红外, 2007, 28(7): 33-36
作者姓名:卢意红  吕绪良  胡江华
作者单位:解放军理工大学工程兵工程学院,江苏,南京,210007
摘    要:本文从材料的角度分析了红外隐身和雷达隐身各自需要的条件,指出在采用分层涂覆法时,红外与雷达复合隐身的技术关键是在满足红外隐身层目标低发射率的同时,能让雷达波顺利穿透该层,使雷达波进入雷达隐身层而被有效耗散.最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性.

关 键 词:红外与雷达复合隐身  掺杂半导体  纳米材料
文章编号:1672-8785(2007)07-0033-04
修稿时间:2007-03-20

Study of Infrared and Radar Compound Stealth
LU Yi-hong,LV Xu-liang,HU Jiang-hua. Study of Infrared and Radar Compound Stealth[J]. Infrared, 2007, 28(7): 33-36
Authors:LU Yi-hong  LV Xu-liang  HU Jiang-hua
Abstract:In this paper,the conditions required separately for the infrared stealth and radar stealth are analyzed in view of the materials.The critical technology of infrared and radar compound stealth is indicated.That is,when using multilayer paint,the radar wave should be allowed to penetrate smoothly into the radar stealth layer while the low emissivity requirement of the infrared stealth layer is satisfied. Finally,the possibility for using doped semiconductor and nanometer material to achieve infrared and radar compound stealth is presented.
Keywords:infrared and radar compound stealth  doped semiconductor  nanometer material
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