| 选择外延MOCVD研制DFB激光器和模斑转换器集成器件 |
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| 引用本文： | 邱伟彬,王圩,董杰,张静媛,周帆. 选择外延MOCVD研制DFB激光器和模斑转换器集成器件[J]. 半导体学报, 2002, 23(5): 459-463. DOI: 10.3969/j.issn.1674-4926.2002.05.003 |
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| 作者姓名： | 邱伟彬 王圩 董杰 张静媛 周帆 |
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| 作者单位： | 中国科学院半导体研究所,光电子工艺中心,北京,100083 |
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| 摘 要： | 研究了利用选择外延生长的InGaAsP材料的厚度增强因子和带隙波长的性质,最大的厚度增强因子为2.9.利用选择外延技术研制的DFB激光器和模斑转换器的集成器件,阈值为10.8mA-在60mA下输出功率为10mW,边模抑制比为35.8dB,垂直方向上的远场发散角从34°减少到9°,垂直方向上的1dB偏调容差为3.4μm.
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| 关 键 词： | 选择外延 对接 模斑转换器 DFB激光器 |
Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD |
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| Qiu Weibin,Wang Wei,Dong Jie,Zhang Jingyuan,Zhou Fan. Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD[J]. Chinese Journal of Semiconductors, 2002, 23(5): 459-463. DOI: 10.3969/j.issn.1674-4926.2002.05.003 |
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| Authors: | Qiu Weibin Wang Wei Dong Jie Zhang Jingyuan Zhou Fan |
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| Abstract: | The characteristics of thickness enhancement factor and bandgap wavelength of selectively grown InGaAsP are investigated.A high thickness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The tolerance of 1dBm misalignment is 3.4μm vertically. |
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| Keywords: | SAG butt-joint spotsize converter DFB |
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