Effect of Oxygen Pressure on the Electrical Properties of $hbox{Bi}_{5} hbox{Nb}_{3}hbox{O}_{15}$ Films Grown by RF Magnetron Sputtering

$hbox{Bi}_{5}hbox{Nb}_{3}hbox{O}_{15} (hbox{B}_{5}hbox{N}_{3})$ films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 $hbox{A/cm}^{2}$ at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of $hbox{5.8} times hbox{10}^{-9} hbox{A/cm}^{2}$ for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 $hbox{fF}/muhbox{m}^{2}$. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the $ hbox{B}_{5}hbox{N}_{3}$ film can be obtained by careful control of OP.