High mobility electron heterostructure wafer fused onto LiNbO3

An (Al,Ga)As heterostructure consisting of a 10 nm wide GaAs single quantum well and an optimized AlAs/GaAs type-II-superlattice barrier is fused onto a new LiNbO₃ substrate by epitaxial lift-off and subsequent wafer bonding. X-electrons formed in the superlattice barrier effectively screen the high mobility electrons in the single quantum well from electronic defects arising at the new hybrid interface. Thus, the electron density as well as its high electron mobility can be preserved in the hybrid system.