Silicon oxide thin films prepared by a photo-chemical vapour deposition technique

Wide band gap a-SiO_x:H films have been prepared by the photochemical decomposition of a SiH₄, CO₂ and H₂ gas mixture. Deposition parameters namely the CO₂ to SiH₄ gas flow ratio, H₂ dilution and chamber pressure were optimized in order to achieve highly photoconducting (1 × 10^-6 S cm^-1) films with an optical gap of 1.99 eV. The optical gap was found to increase with an increase in the CO₂ to SiH₄ flow ratio. A decrease in the photoconductivity, refractive index, spin g-value and a simultaneous increase in the spin density are attributed to an incorporation of oxygen into the films. Upon hydrogen dilution the photoconductivity of a-SiO_x:H films was observed to improve along with an increase of the optical gap. The spin density of a-SiO_x:H films was of the order of 10¹⁷ cm^-9. The optoelectronic properties of the films have been correlated with the bonding configurations in the film, deposition parameters and the growth kinetics. This revised version was published online in November 2006 with corrections to the Cover Date.