Variation in resistance of a nitrogen-enriched silicon layer as a result of the long-range effect of ion implantation |
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| Authors: | E. S. Demidov V. V. Karzanov K. A. Markov |
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| Affiliation: | (1) Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 630600, Russia |
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| Abstract: | An improvement in the insulating properties of a synthesized silicon nitride layer under the influence of ion-beam treatment of the back surface of silicon wafer was detected. This result is consistent with the infrared-spectroscopy data obtained previously and is related to the long-range effect of ion implantation. |
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