| 激光等离子体淀积硅薄膜过程动力学研究 |
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| 引用本文： | 董丽芳,傅广生,李晓苇,韩理,张连水,吕福润.激光等离子体淀积硅薄膜过程动力学研究[J].半导体学报,1989,10(4):280-285. |
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| 作者姓名： | 董丽芳 傅广生 李晓苇 韩理 张连水 吕福润 |
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| 作者单位： | 河北大学物理系 保定
(董丽芳，傅广生，李晓苇，韩理，张连水)，河北大学物理系 保定(吕福润) |
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| 摘 要： | 采用强TEA CO_2脉冲激光辐照SiH_4/H_2系统,对SiH_4激光等离子体淀积硅膜进行了研究,测量了膜淀积及膜性能随淀积条件的变化关系.同时采用光学发射光谱、光声激光偏转方法对其基本的微观和宏观动力学过程进行了研究,在此基础上初步建立了膜淀积的物理模型,计算了膜淀积速率、膜面积等,结果与实验符合得较好.
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| 关 键 词： | 激光 等离子体 淀积 硅薄膜 动力学 |
Study on Kinetic Process of Silicon Film Deposited by Laser Plasma |
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| Dong Lifang/.Study on Kinetic Process of Silicon Film Deposited by Laser Plasma[J].Chinese Journal of Semiconductors,1989,10(4):280-285. |
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| Authors: | Dong Lifang/ |
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| Affiliation: | Dong Lifang/Department of Physics,Hebei University,BaodingFu Guangsheng/Department of Physics,Hebei University,BaodingLi Xiaowei/Department of Physics,Hebei University,BaodingHan Li/Department of Physics,Hebei University,BaodingZhang Lianshui/Department of Physics,Hebei University,BaodingLu Furun/Department of Physics,Hebei University,Baoding |
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| Abstract: | The process of film deposition by laser plasma is studied.The energy of laser,gas pres-sure and temperature of substrate dependence of deposition rate are measured.At the same timethe basic kinetic process in deposition is studied by OES and OLDI. Finally, the model of de-position is suggested based on the experiment results. |
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| Keywords: | Laser plasma deposition kinetic model Film growth |
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