| PDP扫描驱动芯片中高压VDMOS器件的设计 |
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| 引用本文： | 张丽,庄奕琪,李小明,姜法明.PDP扫描驱动芯片中高压VDMOS器件的设计[J].电子质量,2004(10):56-58. |
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| 作者姓名： | 张丽 庄奕琪 李小明 姜法明 |
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| 作者单位： | 西安电子科技大学微电子所,西安,710071;西安电子科技大学微电子所,西安,710071;西安电子科技大学微电子所,西安,710071;西安电子科技大学微电子所,西安,710071 |
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| 摘 要： | PDP扫描驱动芯片完成高低压转换和功率输出,要求器件耐压170v.本文基于BCD工艺,提出了高压器件VDMOS的结构,采用了不附加工艺的场板和场限环两种终端结构提高器件耐压,并利用器件模拟软件MEDICI进行了仿真验证,得到了优化的器件结构参数.
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| 关 键 词： | PDP扫描驱动芯片 VDMOSFET 场板 场限环 MEDICI |
| 文章编号： | 1003-0107(2004)10-0056-03 |
Design of High Voltage VDMOSFET for PDP Scan Driver |
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| Zhang Li,Zhuang Yi-qi,Li Xiao-ming,Jiang Fa-ming.Design of High Voltage VDMOSFET for PDP Scan Driver[J].Electronics Quality,2004(10):56-58. |
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| Authors: | Zhang Li Zhuang Yi-qi Li Xiao-ming Jiang Fa-ming |
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| Abstract: | PDP scan driver accomplishes the chang of voltage from low to high , needing the high voltage transistor of170V. Basing the technology of BCD the configuration of VDMOSFET is presented in this paper .In order to increase thetaken voltage of VDMOS,the terminal technology is adopted including the field limiting ring and the field plate which are freefrom the process added . The VDMOS is simulated by using the MEDICI soft ,and the optimizing Parameters are achieved . |
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| Keywords: | VDMOSFET MEDICI |
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