| 功率VDMOS器件的研究与发展 |
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| 引用本文： | 杨法明,杨发顺,张锗源,李绪诚,张荣芬,邓朝勇.功率VDMOS器件的研究与发展[J].微纳电子技术,2011(10):623-629,673. |
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| 作者姓名： | 杨法明 杨发顺 张锗源 李绪诚 张荣芬 邓朝勇 |
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| 作者单位： | 贵州大学理学院电子科学系贵州省微纳电子与软件技术重点实验室 |
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| 基金项目： | 贵州省科学技术基金(黔科合J字[2008]-2213,[2010]-2134);贵州省优秀青年科技人才(黔科合人字[2009]-15);贵州省高层次人才基金(TZJF-2008-31);贵州大学自然科学青年科研基金项目([2009]-017) |
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| 摘 要： | 简要介绍了垂直双扩散功率场效应晶体管(VDMOS)的研究现状和发展历史.针对功率VDMOS器件击穿电压和导通电阻之间存在的矛盾,重点介绍了几种新型器件结构(包括沟槽栅VDMOS、超结VDMOS、半超结VDMOS)的工作原理和结构特点,以及其在制造工艺中存在的问题.对不同器件结构的优缺点进行了比较分析.对一些新型衍生结构...
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| 关 键 词： | 功率器件 垂直双扩散功率场效应晶体管(VDMOS) 击穿电压 导通电阻 SiC材料 |
Research and Development of Power VDMOS Devices |
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| Yang Faming,Yang Fashun,Zhang Zheyuan,Li Xucheng,Zhang Rongfen,Deng Chaoyong.Research and Development of Power VDMOS Devices[J].Micronanoelectronic Technology,2011(10):623-629,673. |
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| Authors: | Yang Faming Yang Fashun Zhang Zheyuan Li Xucheng Zhang Rongfen Deng Chaoyong |
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| Affiliation: | (Key Laboratory of Micro-Nano Electronics and Software Technology of Guizhou Province, Department of Electronic Science,College of Science,Guizhou University,Guiyang 550025,China) |
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| Abstract: | The research status and the development history of the vertical-double-diffusion power MOSFET(VDMOS) are introduced briefly.The working principle and structure characteristic of several new devices(including trench VDMOS,super junction VDMOS,semi-superjunction VDMOS),as well as problems in manufacturing process which is in the light of contradiction between the breakdown voltage and the conduction resistance of power VDMOS devices are introduced.The advantages and disadvantages of different device structures are compared and analyzed.The characteristics of the new derivatives structures(including poly flanked VDMOS,oxide-bypassed VDMOS and floating islands VDMOS)are analyzed.The newest application progress of the new SiC materials on the VDMOS devices is shown,and the existing problems and development tendency in the future are presented. |
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| Keywords: | power device vertical-double-diffusion power MOSFET(VDMOS) breakdown voltage conduction resistance SiC material |
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