Structural Analysis of CdTe Hetero-epitaxy on (211) Si |
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| Authors: | J.D. Benson R.N. Jacobs J.K. Markunas M. Jaime-Vasquez P.J. Smith L.A. Almeida M. Martinka M.F. Vilela U. Lee |
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| Affiliation: | (1) U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA;(2) Raytheon Vision Systems, Goleta , CA, USA;(3) U.S. Army Research Laboratory, Aberdeen, MD, USA |
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| Abstract: | X-ray diffraction full-width at half-maximum (XRD FWHM), reflection high-energy electron diffraction (RHEED), and atomic force microscopy (AFM) indicate a mosaic structure for molecular-beam epitaxy (MBE) (211)B CdTe/Si. AFM measurements indicate long, thin, small-angle-disoriented grains for CdTe/Si epilayers. These disoriented grains are ~1 μm in the [ ] direction and are ~40 nm in the [ ] direction. The RHEED pattern in the [ ] direction depicts nearly ideal single-crystal periodicity. The RHEED pattern in the [ ] direction is indicative of small-angle-disoriented crystalline grains. Scanning electron microscopy (SEM), AFM, and XRD measurements all indicate an approximate factor of 10 increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. |
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| Keywords: | HgCdTe CdTe/Si molecular-beam epitaxy atomic force microscopy X-ray diffraction full-width at half-maximum reflection high-energy electron diffraction etch pit density mosaic structure |
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