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Zr0.8Sn0.2TiO4微波介质陶瓷材料的掺杂改性
引用本文:陈玉华,刘嵩松.Zr0.8Sn0.2TiO4微波介质陶瓷材料的掺杂改性[J].半导体光电,2003,24(6):447-450.
作者姓名:陈玉华  刘嵩松
作者单位:重庆光电技术研究所,重庆,400060
摘    要:以Zr0 .8Sn0 .2 TiO4 作为主配方 ,以ZnO ,La2 O3,Fe2 O3和NiO作为改性剂 ,采用传统陶瓷制备工艺 ,对其进行了掺杂改性的初步探索。在优选的配方和工艺条件下 ,得到Zr0 .8Sn0 .2 TiO4 添加0 .5wt%ZnO(即质量分数为 0 .5 %的ZnO)的相对介电常数εr≈ 33.2 31,品质因数Q≈ 5 5 2 8(7GHz) ;添加 0 .5wt %ZnO ,0 .5wt?2 O3和 0 .2wt%NiO ,其εr≈ 33.73,Q≈ 5 2 5 4(7GHz) ;添加 1wt%ZnO和 0 .5wt %La2 O3,材料的εr≈ 37.996 ,Q≈ 4 72 3(7GHz)。

关 键 词:Zr0.8Sn0.2TiO4  微波介质陶瓷材料  介电常数  品质因数  掺杂改性  掺杂量  烧结温度
文章编号:1001-5868(2003)06-0447-04
修稿时间:2003年6月26日

Effect of Doping in Zr0.8Sn0.2TiO4 Microwave Dielectric Ceramic
CHEN Yu-hua,LIU Song-song.Effect of Doping in Zr0.8Sn0.2TiO4 Microwave Dielectric Ceramic[J].Semiconductor Optoelectronics,2003,24(6):447-450.
Authors:CHEN Yu-hua  LIU Song-song
Abstract:Dielectric ceramic of Zr_(0.8)Sn_(0.2)TiO_(4) containing ZnO, La_(2)O_(3), Fe_(2)O_(3) and NiO as sintering aids were prepared and investigated for microwave dielectric properties. By using conventional ceramic techniques, with the optimum composition and technique. With 0.5wt%ZnO additives, a ceramic having a dielectric constant, a quality factor at 7 GHz of 33.231 and (5 528), was obtained. With 0.5wt%ZnO,0.5wt%Fe_(2)O_(3) and 0.2wt%NiO additives, a ceramic having a dielectric constant, a quality factor at 7 GHz of 33.73 and 5 254, was obtained. With 1wt%ZnO and 0.5wt%La_(2)O_(3) additives, a ceramic having a dielectric constant, a quality factor at 7 GHz of 37.996 and 4 723, was obtained.
Keywords:Zr_(0  8)Sn_(0  2)TiO_(4)  microwave  dielectric  ceramics  dielectric ceramics  quality  factor  doping  additive  concentrations  sintering  temperature
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