| 一款JFET低噪声前置放大器的设计 |
| |
| 引用本文： | 张晓飞,董浩斌,鲁永康,吴鹏.一款JFET低噪声前置放大器的设计[J].电声技术,2009,33(11):34-36. |
| |
| 作者姓名： | 张晓飞 董浩斌 鲁永康 吴鹏 |
| |
| 作者单位： | 中国地质大学（武汉）机械与电子信息学院,湖北武汉430074 |
| |
| 摘 要： | 在对级联网络及结型场效应管的噪声分析基础上，采用结型场效应管等分立元件设计了一款低噪声前置放大器实用电路。并对其幅频特性、输入阻抗和等效输入噪声进行了测量，结果表明其输入阻抗高达71Mn。等效输入噪声电压为0．7nV／√Hz，是一种适合于较高内阻传感器的较理想的低噪声前置放大器电路。
|
| 关 键 词： | 结型场效应管 低噪声 前置放大器 较高内阻传感器 |
Design of JFET Low Noise Preamplifier |
| |
| ZHANG Xiao-fei,DONG Hao-bin,LU Yong-kang,WU Peng.Design of JFET Low Noise Preamplifier[J].Audio Engineering,2009,33(11):34-36. |
| |
| Authors: | ZHANG Xiao-fei DONG Hao-bin LU Yong-kang WU Peng |
| |
| Affiliation: | ZHANG Xiao-fei,DONG Hao-bin,LU Yong-kang,WU Peng (Institute of Mechanical & Electronic Engineering,China University of Geosciences,Wuhan 430074,China) |
| |
| Abstract: | Based on the noise analysis of the the series-wound amplifiers and the JFET, an applied circuit of low-noise preamplifier is designed using JFET and discrete components. The amplitude-frequency characteristics, input impedance and the equivalent input noise voltage are tested. The result indicates that the circuit＇s input impedance is 71 MΩ and the equivalent input noise voltage is 0.7 nV/√Hz. It is an ideal circuh of low noise preamplifier for the sensors with high internal resistance. |
| |
| Keywords: | JFET low noise preamplifier high internal resistance sensor |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
