P-type carbon doping of GaSb |
| |
Authors: | R Wiersma J A H Stotz O J Pitts C X Wang M L W Thewalt S P Watkins |
| |
Affiliation: | (1) Department of Physics, Simon Fraser University, V5A 1S6 Burnaby, BC, Canada |
| |
Abstract: | The growth of carbon-doped GaSb by MOVPE has never been reported to our knowledge, despite increasing interest in carbon-doped
GaAsSb alloys for heterojunction bipolar transistor applications. In this work, we report the use of carbon tetrachloride
(CCl4) in conjunction with triethylgallium (TEGa) and trimethylantimony (TMSb) to achieve p-type doping levels in GaSb from 5 1016 cm−3 to greater than 1019 cm−3. High resolution x-ray diffraction measurements confirm that the effect of carbon on the lattice parameter is significant
for hole concentrations above 1 1019 cm−3 as in the case of GaAs. By introducing controlled low doping levels of carbon into thick homoepitaxial samples, we have succeeded
in identifying a carbon-related low temperature photoluminescence band at 795 meV, which we ascribe to band-to-acceptor transitions
of carbon acceptors. Temperature-dependent Hall measurements on lightly carbon-doped samples yield somewhat lower binding
energies than the spectroscopic data due to impurity banding in the acceptor excited states. |
| |
Keywords: | Metalorganic vapor phase epitaxy carbon doping GaSb carbon tetrachloride photoluminescence acceptor binding energy |
本文献已被 SpringerLink 等数据库收录! |