| 氧化铝钝化在晶体硅太阳电池中的应用 |
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| 引用本文： | 吴大卫,贾锐,武德起,丁武昌,陈伟,陈晨,岳会会,刘新宇,陈宝钦.氧化铝钝化在晶体硅太阳电池中的应用[J].微纳电子技术,2011,48(8):528-535. |
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| 作者姓名： | 吴大卫 贾锐 武德起 丁武昌 陈伟 陈晨 岳会会 刘新宇 陈宝钦 |
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| 作者单位： | 1. 中国科学院微电子研究所微波器件与集成电路研究室,北京,100029
2. 中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)资助项目及攀登计划课题资助项目，国家面上资助项目，中国科学院知识创新工程领域前沿资助项目 |
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| 摘 要： | 首先,回顾了氧化铝钝化技术的发展历程,对制备氧化铝钝化薄膜的手段进行了总结,并且详细描述了氧化铝的材料性质和钝化的机理。其次,指出氧化铝薄膜的优点在于优异的场效应钝化特性和良好的化学钝化性质,因此可以应用于低掺和高掺p型硅表面的钝化。此外,氧化铝薄膜及其叠层还具有良好的热稳定性,符合丝网印刷太阳电池的要求。最后,总结了氧化铝薄膜钝化技术在晶体硅太阳电池中的最新研究动态,指出氧化铝钝化薄膜用于工业生产中存在的问题,并针对这些问题提出了有效的解决方案。
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| 关 键 词： | 硅表面钝化 氧化铝 原子层沉积 场效应钝化 烧结稳定性 |
Al2O3 Passivation for Crystalline Silicon Solar Cells |
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| Wu Dawei,Jia Rui,Wu Deqi,Ding Wuchang,Chen Wei,Chen Chen,Yue Huihui,Liu Xinyu,Chen Baoqin.Al2O3 Passivation for Crystalline Silicon Solar Cells[J].Micronanoelectronic Technology,2011,48(8):528-535. |
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| Authors: | Wu Dawei Jia Rui Wu Deqi Ding Wuchang Chen Wei Chen Chen Yue Huihui Liu Xinyu Chen Baoqin |
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| Affiliation: | b(a.Key Laboratory of Microwave Devices and Integrated Circuits;b.Key Laboratory of Nanotechnology and Novel Device Integration Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | Firstly,the development of the aluminum oxide(Al2O3)passivation technology is reviewed,and the preparation methods are summarized.Then,the material properties and passivation mechanisms of the Al2O3 films are described in detail.It is pointed out that the Al2O3 films have excellent field-effect passivation property and chemical passivation property.Thus,the Al2O3 films can be well applied to the passivation of lowly doped and highly doped p-type silicon surfaces.Besides that,the Al2O3 films are of good heat stability,satisfying the requirement of screen-printed solar cells.Finally,the latest studies of the Al2O3 films passivation technology applied to crystalline silicon solar cells are presented,the application problems of Al2O3 films for the industry production are pointed out,and some effective solutions are proposed in the light of these problems. |
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| Keywords: | silicon surface passivation aluminum oxide atomic layer deposition field-effect passivation firing stability |
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