| 采用离子注入N~+层和质子隔离的12GHz 200mW功率GaAs MESFET |
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| 引用本文： | 吴允弘
,龚邦瑞
,吕振中
,潘德华.采用离子注入N~+层和质子隔离的12GHz 200mW功率GaAs MESFET[J].固体电子学研究与进展,1984(2). |
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| 作者姓名： | 吴允弘 龚邦瑞 吕振中 潘德华 |
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| 摘 要： | 本文报导了采用质子隔离和Si~+离子注入N~+接触层技术,提高了功率GaAa MESFET的微波性能和可靠性.已经制成栅长1μm,总栅宽600μm的GaAs功率MESFET,12GHz下最大输出功率210mW,经严格考核表明器件具有较高的可靠性.
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12GHz 200MW GaAs MESFET with Proton Isolation and Si~+ Ion Implantation N~+ Contact Layer |
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| Abstract: | This paper presents proton isolation and Si ion implantation N+ contact layer techniques, which have improved the microwave performance and reliability of GaAs power MESFET.
GaAs MESFET with Gate length 1μm and total gate width 600μm have been fabricated, with maximum output power being 210mW at 12GHz. Reliability tests show that the devices have excellent reliability. |
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