| CMOS/SOS器件长期可靠性试验 |
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| 引用本文： | 何林,管少龙,石红. CMOS/SOS器件长期可靠性试验[J]. 微电子学, 1988, 0(6) |
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| 作者姓名： | 何林 管少龙 石红 |
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| 作者单位： | 四川固体电路研究所，成都电讯工程学院，四川固体电路研究所 实习研究生 |
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| 摘 要： | 用本所研制的CMOS/SOS器件作了两项试验,即CMOS/SOS4012长期可靠性试验和不同版图设计、不同器件工艺研制的CMOS/SOS长期可靠性对比试验。试验结果表明:不同版图设计和器件工艺对CMOS/SOS器件可靠性有较大的影响;改进了版图和器件工艺研制的CMOS/SOS器件达到了较高的可靠性;不同栅介质结构的CMOS/SOS器件在高温加电运行中,阈值电压的变化是不同的。
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| 关 键 词： | CMOS/SOS电路 可靠性 |
Long-term Reliability tests for CMOS/SOS Devices |
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| He Lin,Guan Shaolong and Shi Hong. Long-term Reliability tests for CMOS/SOS Devices[J]. Microelectronics, 1988, 0(6) |
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| Authors: | He Lin Guan Shaolong Shi Hong |
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| Affiliation: | Sichuan Institute of Solid-state Circuits |
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| Abstract: | Two long-term reliability tests were performed on CMOS/SOS devices developed by our institute. One was for CMOS 4012 and another was a comparative test for CMOS/ SOS devices developed wilh different mask designing and device technology. It is shown that different mask designing and device technology have a strong influence on CMOS/ SOS devices, and higher reliability can be achieved using CMOS/SOS device with improved mask designing and technology. The results also showed that the threshold voltage of the device varied with different gate dielectrics during high temperature power-on operation. |
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| Keywords: | CMOS/SOS circuit Reliability |
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