IGBT模块栅氧老化机理分析与表征方法研究

绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）作为电力电子系统的核心器件，广泛应用于新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域。栅氧层作为IGBT中相对薄弱的环节，如何准确地预测IGBT栅氧层老化状态成为学术界和工业界的研究热点。首先，分析IGBT栅氧层老化机理以及栅氧层老化对IGBT关断过程的影响，提出关断延迟时间td(off)作为IGBT栅氧层老化状态的状态参数。其次，建立IGBT栅氧层老化仿真模型，并对td(off)表征IGBT栅氧层老化状态进行仿真分析。最后，搭建了双脉冲实验平台，获得了栅氧层老化影响IGBT功率模块相关电气参数的实验结果，并与仿真结果进行了比较验证。实验结果证明td(off)可以有效地表征IGBT栅氧层老化状态。该研究对电力电子器件和装置的运行维护与状态预测具有重要的应用价值。

Research on Mechanism Analysis and Characterization Method for Gate Oxygen Degradation of IGBT Module

As the core device of power electronic system, insulated gate bipolar transistor (IGBT) is widely applied to important fields such as new energy power generation, rail locomotive traction, electric vehicle drive and aerospace. Since the gate oxide layer is a relatively weak link in IGBT, how to accurately predict its degradation state has become a research hotspot in both academia and industry. In this paper, the degradation mechanism of the gate oxide layer in IGBT and the influence of degradation on the IGBT turn-off process are analyzed at first, based on which the turn-off delay time td(off) is proposed as the parameter of the degradation state. Then, a degradation simulation model of IGBT gate oxide layer is estab-lished, and the degradation state characterized by td(off) is simulated. Finally, a double pulse experimental platform was built, and the experi-mental results of related electrical parameters of the IGBT power module affected by the gate oxide layer were obtained, which were further compared with the simulation results. Experimental results show that td(off) can effectively characterize the degradation state of IGBT gate oxide layer. The work conducted in this paper has an important application value for the operation, maintenance and state prediction of power electron-ic devices and equipment.