Multigate GaN RF Switches With Capacitively Coupled Contacts

We present the analysis and the performance characteristics of novel III-Nitride multigate (MG) radio-frequency (RF) switches fabricated over AlGaN/GaN heterostructures using capacitively coupled contacts $(hbox{C}^{3})$. $ hbox{C}^{3}$ device technology does not require contact annealing and, thus, allows for fully self-aligned processing of MG devices with tight electrode spacing. The combination of $hbox{C}^{3}$ electrodes with MG RF switch design results in devices with significantly lower OFF-state capacitance, higher isolation, and higher RF switching power as compared to conventional FET-based RF switches.