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Al x Ga1 – x As/GaAs/Al x Ga1 – x As Double Quantum Well with a Thin AlAs Interwell Barrier: Structural Characterization by SIMS and XRD |
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| Authors: | Afanas'ev A M Galiev G B Imamov R M Klimov E A Lomov A A Mokerov V G Saraikin V V Chuev M A |
| Affiliation: | (1) Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia;(2) Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Russia;(3) Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia |
| Abstract: | An Al x Ga1 – x As/GaAs/Al x Ga1 – x As double quantum well with a thin AlAs interwell barrier is examined by SIMS and double-crystal XRD for an AlAs thickness of about 10 or 18 Å. Thickness and other structural parameters are determined for each layer. The rocking curves are found to indicate a fairly abrupt interwell barrier. |
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