Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement |
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Authors: | Chun-Yuan Lu Chun-Chang Lu Ping-Hung Tsai Yin Yin Kyi Tien-Ko Wang |
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Affiliation: | Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, ROC |
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Abstract: | Charge-pumping (CP) techniques with various rise and fall times and with various voltage swings are used to investigate the energy distribution of interface-trap density and the bulk traps. The charge pumped per cycle (Qcp) as a function of frequency was applied to detect the spatial profile of border traps near the high-k gate dielectric/Si interface and to observe the phenomena of trap migration in the high-k dielectric bulk during constant voltage stress (CVS) sequence. Combining these two techniques, a novel CP technique, which takes into consideration the carrier tunneling, is developed to measure the energy and depth profiles of the border trap in the high-k bulk of MOS devices. |
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Keywords: | High-k Gate dielectric MOS devices Charge-pumping |
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