MBE生长GaAlAs/GaAs量子阱激光器材料的光谱和结构特性研究

本文用低温光致荧光（PL）谱及X射线双晶衍射方法对MBE方法生长的GaAlAs/GaAs（100）量子阱结构材料进行了测试分析。结果表明，在材料生长过程中，深能级的引入严重影响了材料的光学特性及界面完整性。通过改变衬底温度、V／Ⅲ速流比等实验条件，得到了质量较好的材料，低温光致荧光峰的半峰宽达到1.7meV，双晶衍射峰的半峰宽为9.68″。同时对实验样品的双晶衍射回摆曲线中干涉条纹及峰的劈裂现象进行了理论分析，并利用PL谱将深能级对材料、器件性能的影响做了有益的讨论。

A STUDY OF PHOTOLUMINESCENCE AND THE STRUCTURAL CHARACTERISTICS OF GaAlAs/GaAs QUANTUM WELL LASERS

High quality GaAlAs/GaAs quantum well (QW) structure grown on a (100) GaAs substrate by molecular beam epitaxy(MBE) system is characterized by photoluminescence (PL) and X ray double crystal diffraction. Interferance fringes and splitting peaks in double crystal rocking curves are analysed theoretically. The deep energy levels in affecting the characteristics of materials and lasers are also discussed. The experimental results show that the use of photoluminescence and X ray double crystal diffraction are very important in testing the quality of quantum wells and improving the molecular beam epitaxy technology.