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| 砷化镓晶片表面的XPS研究 | |
| 引用本文： | 任殿胜,王为,李雨辰,严如岳. 砷化镓晶片表面的XPS研究[J]. 液晶与显示, 2002, 17(4): 270-274 |
| 作者姓名： | 任殿胜 王为 李雨辰 严如岳 |
| 作者单位： | 1. 天津大学,化工学院,天津,300072;信息产业部,电子第四十六研究所,天津,300192 2. 天津大学,化工学院,天津,300072 3. 信息产业部,电子第四十六研究所,天津,300192 |
| 摘 要： | 用X射线光电子能谱分析技术（XPS）研究了几种砷化镓抛光片及经不同表面处理方法处理的砷化镓晶片表面的化学计量比和表面化学组成。结果表明砷化镓抛光片的表面自然氧化层中含有Ga2O3、As2O5、As2O3及元素As；表面化学计量比明显富镓，而经过适当的化学处理后这些表面特性能得到较大改善。 |
| 关 键 词： | 晶片 砷化镓 XPS 表面特性 X射线电子能谱分析 |
| 文章编号： | 1007-2780(2002)04-0270-05 |
| 修稿时间： | 2002-01-25 |
XPS Study of Surface Properties of GaAs Wafers |
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| REN Dian sheng ,,WANG Wei ,LI Yu chen ,YAN Ru yue. XPS Study of Surface Properties of GaAs Wafers[J]. Chinese Journal of Liquid Crystals and Displays, 2002, 17(4): 270-274 | |
| Authors: | REN Dian sheng WANG Wei LI Yu chen YAN Ru yue |
| Affiliation: | REN Dian sheng 1,2,WANG Wei 1,LI Yu chen 2,YAN Ru yue 2 |
| Abstract: | A measurement method of GaAs surface composition and Ga/As atomic ratio was developed using X ray photoelectron spectroscopy (XPS). A series of GaAs polished wafers and GaAs wafers treated with some chemical solutions were studied by XPS.The results show that the native oxide layer on GaAs surface is composed of Ga 2O 3,As 2O 5,As 2O 3 and element As;and the Ga/As atomic ratio drifts off the stoichiometry far away.After treated with some chemical solutions,the GaAs surface is modified. |
| Keywords: | GaAs surface XPS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |