HCl氧化物MOS结构质子辐照诱导的界面陷阱效应

用微分电容法研究质子辐照HCl氧化物铝栅MOS结构诱导的界面陷阱,栅氧化层在1 160℃很干燥的、含0～10％HCl的气氛中热生长而成,质子辐照能量为120～300keV,注入总剂量范围为8×10~(13)～1×10~(16)p/cm~2。结果表明,辐照诱导的界面陷阱能级密度随质子能量、剂量增加而增加。然而,氧化层中掺入6％HCl时,辐照诱导的界面陷阱明显减少。这样,已能有效地改变MOS器件的抗辐照性能。实验结果可用H~+二级过程解释。

The Proton Radiation-Induced Interface Traps Effects on MOS Structure of HCl Oxides

The proton radiation-induced interface traps in Al-gate MOS structure with HCl oxide are studied by means of the differential capacitance method. The gate oxides were thermally grown in dry O2+(0-10%) very dry HC1 gas at 1 160 The proton radiation energy ranged from 120 keV to 300 keV and total dose ranged from 8X1013 p/cm2 to 1 × 1016 p/cm2. Our results indicate that the overall density of the radiation-induced interface traps increases with proton energy and total dose. However, by introducing 6 % HC1 during the oxidation process, the density of the radiation-induced interface traps are drastically re-duced. Thus, the radiation response of MOS device can be significantly changed. These ex-perimental results can be explained by of the two-stage H+ process.