| 补偿掺杂i层对n-ZnO/i-ZnO/p-Si薄膜太阳能电池性能影响的模拟研究 |
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| 引用本文： | 林家辉,彭启才,赵新为. 补偿掺杂i层对n-ZnO/i-ZnO/p-Si薄膜太阳能电池性能影响的模拟研究[J]. 西华大学学报(自然科学版), 2011, 30(5): 43-46 |
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| 作者姓名： | 林家辉 彭启才 赵新为 |
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| 作者单位： | 1. 西华大学材料科学与工程学院,四川 成都,610039
2. 日本东京理科大学理学部物理学科,东京 162 - 8601 |
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| 基金项目： | 教育部“春晖计划”资助项目(z2009-1-61011) |
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| 摘 要： | 提出一种新型n-ZnO/i-ZnO/p-Si太阳能电池结构,使用AMPS软件对该结构太阳能电池进行了模拟研究,探索H,N杂质补偿掺杂形成本征i层对该结构太阳能电池的影响。研究发现在掺杂浓度为H=1.7×1017,N=2.8×1017时太阳能电池的转换效率可达15%,并对其转换机理进行了研究。
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| 关 键 词： | 太阳能电池 ZnO 补偿掺杂 复合率 |
The Simulation of the Effect of Compensating Doping i-ZnO Layer on the n-ZnO/i-ZnO/p-Si Solar Cell |
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| LIN Jia-hui,PENG Qi-cai,ZHAO Xin-wei. The Simulation of the Effect of Compensating Doping i-ZnO Layer on the n-ZnO/i-ZnO/p-Si Solar Cell[J]. Journal of Xihua University(Natural Science Edition), 2011, 30(5): 43-46 |
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| Authors: | LIN Jia-hui PENG Qi-cai ZHAO Xin-wei |
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| Affiliation: | LIN Jia-hui1,PENG Qi-cai1,ZHAO Xin-wei2(1.School of Materials Science and Engineering,Xihua University,Chengdu 610039 China,2.Department of Physics,Tokyo University of Science,Tokyo 162-8601 Japan) |
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| Abstract: | In this paper,a new type structure of n-ZnO/i-ZnO/p-Si solar cell is proposed.The performance of the solar cell is simulated by using of AMPS(Analysis of Microelectronic and Photonic Structures).The effect of the compensating doping i-ZnO layer on the performance of solar cell is explored.It is found in the simulation that a conversion coefficient of 15% is obtained when p-type doping of Nitrogen is 2.8×1017 and n-type doping of Hydrogen is 1.7×1017 in i-ZnO layer.The mechanism of the energy conversion is studied as well. |
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| Keywords: | solar cell ZnO compensating doping recombination |
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