Characterization and properties of r.f.-sputtered thin films of the alumina–titania system |
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Authors: | Dong-Hau Kuo Kuo-Hwa Tzeng |
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Affiliation: | Department of Materials Science and Engineering, National Dong Hwa University, Shoufeng, Hualien, Taiwan, ROC |
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Abstract: | Thin films of the aluminum oxide (Al2O3)–titanium oxide (TiO2) system including Al2O3, TiO2, and Al2O3/TiO2 were prepared by radio-frequency (r.f.) magnetron sputtering using ceramic targets of Al2O3, TiO2, and Al2O3/TiO2 composites with different Al2O3/TiO2 ratio. These films were studied at different substrate temperatures, r.f. powers, and annealing temperatures. Composition, microstructure, thermomechanical property of internal stress, and mechanical property of scratch adhesion, were evaluated. A thin film with a dielectric constant of 62 and a loss tangent of 0.012 was obtained at 500 °C from a 10/90 target. This thin film remained the high dielectric constant of TiO2, but had an improvement in the dielectric loss tangent. Al2O3-containing films had a higher resistivity and breakdown field, which was improved further by annealing. Optical properties, such as refractive index and optical transmittance, were also investigated. |
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Keywords: | Aluminum oxide Titanium oxide Mechanical property Electrical properties and measurements Optical properties |
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