The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devices |
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Authors: | José L Meléndez Jeff Beck |
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Affiliation: | (1) Central Research Laboratories, Texas Instruments, Inc., 75265 Dallas, TX;(2) Present address: Department of Electrical Engineering, Stanford University, 94305 Stanford, CA |
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Abstract: | The low frequency 1/f noise charge found in Hg1-xCdxTe integrating metal-insulator-semiconductor (MIS) devices operating at 40K and low bias above threshold is found to be independent
of integration time. The signal theory of random processes is utilized to demonstrate that 1/f noise charge resulting from
carrier number fluctuations due to insulator traps should not depend on integration time, while 1/f noise charge resulting
from 1/f noise in any current filling the MIS well should be proportional to integration time. This distinction allows for
the determination of effective insulator trap densities from low temperature 1/f noise data on simple MIS structures. The
technique is applied to a number of n-channel and p-channel devices and the effective trap densities in ZnS are determined. |
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Keywords: | HgCdTe 1/f noise integrating MIS devices ZnS |
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