| 不同注F剂量与CMOS运放电路辐照损伤的相关性 |
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| 引用本文： | 任迪远,陆妩,余学锋,郭旗,张国强,胡浴红,王明刚,赵文魁. 不同注F剂量与CMOS运放电路辐照损伤的相关性[J]. 半导体学报, 2003, 24(7): 780-784 |
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| 作者姓名： | 任迪远 陆妩 余学锋 郭旗 张国强 胡浴红 王明刚 赵文魁 |
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| 作者单位： | [1]中国科学院新疆理化技术研究所，乌鲁木齐830011 [2]西安微电子技术研究所，西安710054 |
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| 摘 要： | 在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.
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| 关 键 词： | 注FCMOS运算放大器 电离辐照 跨导 |
| 文章编号： | 0253-4177(2003)07-0780-05 |
| 修稿时间： | 2002-08-31 |
Relativity of Radiation Damage in Fluorinated CMOS Operational Amplifiers |
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| Ren Diyuan ,Lu Wu ,Yu Xuefeng ,Guo Qi ,Zhang Guoqiang ,Hu Yuhong ,Wang Minggang and Zhao Wenkui. Relativity of Radiation Damage in Fluorinated CMOS Operational Amplifiers[J]. Chinese Journal of Semiconductors, 2003, 24(7): 780-784 |
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| Authors: | Ren Diyuan Lu Wu Yu Xuefeng Guo Qi Zhang Guoqiang Hu Yuhong Wang Minggang Zhao Wenkui |
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| Affiliation: | Ren Diyuan 1,Lu Wu 1,Yu Xuefeng 1,Guo Qi 1,Zhang Guoqiang 1,Hu Yuhong 2,Wang Minggang 2 and Zhao Wenkui |
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| Abstract: | Ionizing radiation effects on fluorinated and no F-implanted CMOS operational amplifiers are investigated,and the difference between the radiation performances is analyzed and compared.The results show that the suit F-implanted can availably control the increase of radiation induced oxide charge especially for interface state so that the capacity of radiation hardness is improved. |
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| Keywords: | fluorinated CMOS Op-Amps ionizing radiation transconductance |
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