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Localized irradiation effects on tunnel diode transitions in multi-junction concentrator solar cells |
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| Authors: | Avi Braun Baruch Hirsch Eugene A. Katz Jeffrey M. Gordon Wolfgang Guter |
| Affiliation: | a Department of Solar Energy and Environmental Physics, Jacob Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus 84990, Israel b Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beersheva 84105, Israel c Pearlstone Center for Aeronautical Engineering Studies, Department of Mechanical Engineering, Ben-Gurion University of the Negev, Beersheva 84105, Israel d Fraunhofer-Institut für Solare Energiesysteme, Heidenhofstraße 2, 79110 Freiburg, Germany |
| Abstract: | Multi-junction concentrator solar cells incorporate tunnel diodes that undergo a transition from high-conductance tunneling to low-conductance thermal diffusion behavior, typically at threshold current densities of the order of 102-103 mA/mm2. We present experimental evidence of a prominent heretofore unrecognized dependence of threshold current density on the degree of localized irradiation, in different solar cell architectures. We also show that solar cells with non-uniform metallization can exhibit an additional spatial dependence to the tunnel diode threshold current density. These previously undiscovered phenomena - which should be observable in all non-uniformly irradiated photovoltaic tunnel diodes - are interpreted as being derived from the lateral spreading of excess majority carriers (analogous to current spreading in light-emitting diodes (LEDs)). The consequences for concentrator photovoltaics are addressed. |
| Keywords: | Photovoltaics Concentrator Tunnel diode Multi-junction Solar |
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