1.50 /spl mu/m CW operation of GaInNAs/GaAs laser diodes grown by MOCVD |
| |
| Authors: | Yokozeki M Mitomo J Sato Y Hino T Narui H |
| |
| Affiliation: | Mater. Labs., Sony Corp., Atsugi, Japan; |
| |
| Abstract: | Room-temperature continuous-wave operation of a 1.5 /spl mu/m range GaInNAs laser grown by metal organic chemical vapour deposition is reported. The lasing wavelength of the GaInNAs/GaAs double quantum well laser was 1.50 /spl mu/m and the threshold current was 245 mA. The characteristic temperature between 10 and 50/spl deg/C was about 119 K under pulse operation. |
| |
| Keywords: | |
|
|
