| 微波功率晶体管的发展与分析 |
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| 引用本文： | 赵正平. 微波功率晶体管的发展与分析[J]. 微纳电子技术, 1992, 0(1) |
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| 作者姓名： | 赵正平 |
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| 作者单位： | 机电部第13研究所 石家庄 |
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| 摘 要： | 本文阐述了国内外硅双极微波功率晶体管和砷化镓微波功率场效应晶体管的发展历史和现状,并分析了微波功率晶体管的发展特点。介绍了HBT,HFET,MISFET,金刚石、SiC电子器件,真空微电子器件等用于或将用于微波、毫米波功率领域中的情况。提出了发展微波功率晶体管的几点想法。
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| 关 键 词： | 微波器件 功率晶体管 硅 场效应晶体管 砷化镓 |
Development and Analyses on Microwave Power Transistors |
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| Zhao Zhengping. Development and Analyses on Microwave Power Transistors[J]. Micronanoelectronic Technology, 1992, 0(1) |
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| Authors: | Zhao Zhengping |
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| Abstract: | The paper describes the development and current state of Si bipolar microwave power transistor and GaAs microwave power FET and analyses the features of the transistors, The conditions that HBT, HFET, MISFET, diamond and SiC electronic devices, and vacuum microelectronic device are used or will be used in the field of microwave and millimeter wave are introduced, Some opinions on developing microwave power transistors are also proposed. |
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| Keywords: | Microwave device Power transistor Si FET GaAs |
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