| 采用缓冲层结构的软恢复二极管研究 |
| |
| 引用本文： | 张海涛,张斌,王均平.采用缓冲层结构的软恢复二极管研究[J].电力电子技术,2003,37(2):79-81. |
| |
| 作者姓名： | 张海涛 张斌 王均平 |
| |
| 作者单位： | 清华大学核能技术研究院,北京,102201 |
| |
| 摘 要： | 介绍了一种采用缓冲基区结构的快速软恢复二极管。二极管基区由传统的轻掺杂衬底基区N^-与扩散形成的较重掺杂的N区(缓冲基区)两部分组成。实验结果表明，该二极管不仅具有传统PIN二极管的高电压、低压降特性，而且反向恢复软度因子提高到了1．0左右，大约是传统的电子辐照PIN二极管的3倍。
|
| 关 键 词： | 二极管 缓冲层结构 电力电子技术 外延工艺 |
| 文章编号： | 1000-100(2003)02-0079-03 |
| 修稿时间： | 2002年8月21日 |
Study of Soft Recovery Diode with Buffering Base Region by the Diffusion |
| |
| ZHANG Hai tao,ZHANG Bin,WANG Jun ping.Study of Soft Recovery Diode with Buffering Base Region by the Diffusion[J].Power Electronics,2003,37(2):79-81. |
| |
| Authors: | ZHANG Hai tao ZHANG Bin WANG Jun ping |
| |
| Abstract: | This paper introduces a fast and soft recovery diode with buffering base region. The base design of the diode consists of conventional lightly doped substrate N - and a more heavily doped region N (buffering region) by the diffusion. The results of tests indicate that not only the diodes with buffering base region have high breakdown voltage and low forward voltage drop, but also its reverse recovery softness is higher than conventional PIN diode. The softness is increased to about 1.0, and is about three times as large as conventional PIN diode by electron irradiation. |
| |
| Keywords: | diode fast soft recovery baffering base region |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
