| 准同型相界处BNBT无铅压电陶瓷的研究 |
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| 引用本文： | 李晓娟,;龙伟,;张永元. 准同型相界处BNBT无铅压电陶瓷的研究[J]. 陕西工学院学报, 2008, 0(3): 1-4 |
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| 作者姓名： | 李晓娟, 龙伟, 张永元 |
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| 作者单位： | [1]西安工业大学材料与化工学院,陕西西安710032; [2]西安科技大学基础部,陕西西安710054 |
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| 摘 要： | 探索了准同型相界处BNT—BT（简称BNBT）二元体系无铅压电陶瓷的制备工艺及制备条件。采用XRD、SEM等测试技术，分析了制备工艺和制备条件对准同型相界处BNBT压电陶瓷晶体的微观结构、压电性能、介电性能等的影响，从而确定出最佳的制备工艺和制备条件。利用谐振-反谐振法得出最佳制备条件下制备的BNBT无铅压电陶瓷的介电性、压电性分别为：d33=120pC／N，εr=626，kp=20．34％，Qm=205．34。
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| 关 键 词： | BNBT 无铅压电陶瓷 结构 电学性能 |
Studies of BNBT lead-free piezoelectric ceramic at MPB |
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| Affiliation: | LI Xiao-juan, LONG Wei, ZHANG Yong-yuan (1. School of Materials and Chemical Engineering, Xi＇an Technological University, Xi＇an 710032, China; 2. Department of Basic Courses, Xi＇an University of Science and Technology, Xi＇an 710054, China) |
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| Abstract: | In this paper, the two systems of production technics and production conditions of BNT-BT （abbreviation BNBT） （lead-free piezoelectric ceramic ） were explored at morphotropic phase boundary （MPB）. The effects of production technics and production conditions on microstructure, dielectric properties and piezoelectric properties of BNBT lead-free piezoelectric ceramic were analyzed by XRD, SEM etc. Meas- u_ring techniques, and the optimal production technics and production conditions were confirmed. Under the optimal product condition, the good dielectric properties and piezoelectric properties of BNBT lead-free piezoelectric ceramic were obtained： d33=120pC/N,εr=626,kp=20.34%,Qm=205.34 by resonance-antiresonance. |
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| Keywords: | BNBT lead-free piezoelectric ceramic structure electric propertie |
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