| Abstract: | β-Ga2O3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes,field-effect transistors and substrates for light-emitting diodes.However,the preparation of large β-Ga2O3 crystals is undeveloped and many properties of this material have not been discovered yet.In this work,2-inch β-Ga2O3 single crystals were grown by using an edge-defined film-fed growth method.The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum.The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga2O3 crystals were investigated systematically. |
