| Abstract: | A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate.By using the complex variable approach,the distribution of thermalstress in the substrate can be characterized more accurately.TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (＜ ±5％).The proposed thermal-stress model can be integrated into stress-driven design flow for 3-D IC,leading to the more accurate timing analysis considering the thermal-stress effect. |
