Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

The magnitude of fractional current variation in ultra-small (30 nm channel length) MOSFETs due to single charge trapping-detrapping events at any position within the gate dielectric is studied using numerical simulation. These random telegraph signals in the drain current indicate the amplitude of low frequency MOSFET noise. Simulations are performed for realistic devices with poly-silicon gates subject to poly-silicon depletion, and for both SiO₂ and HfO₂ as dielectric materials.