The effect of annealing at 1400 °C on the structural evolution of porous C-rich silicon (boron)oxycarbide glass |
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Authors: | Gian Domenico Sorarù Raquel Pena-Alonso Hans-Joachim Kleebe |
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Affiliation: | 1. Dipartimento di Ingegneria dei Materiali e Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Trento, Italy;2. Technische Universität Darmstadt, Institute for Applied Geosciences, GeoMaterial Science, D-64287 Darmstadt, Germany;1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People''s Republic of China;2. Laboratory for Microstructures, Shanghai University, Shanghai 200444, People''s Republic of China;1. Physikalisch-Chemisches Institut, Justus Liebig Universität Giessen, Heinrich-Buff-Ring 58, 35392 Giessen, Germany;2. Institut für Angewandte Geowissenschaften, Technische Universität Darmstadt, Schnittspahnstraße 9, D-64287 Darmstadt, Germany |
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Abstract: | A precursor SiBOC glass was annealed at 1400 °C for 1, 3, 5 and 10 h and then it was HF etched in order to dissolve the SiO2/B2O3 phase and to obtain a porous C-rich oxycarbide glass. The porous material was studied by N2 absorption. The pore diameter of the porous C-rich SiBOC glass ranges between 2 and 5 nm and continuously increases with increasing annealing time. The pore volume also increases with the annealing time up to ≈1.0 cm3/g which is close to the pore volume estimated from the chemical composition (1.04 cm3/g) assuming complete dissolution of the silica-based phase. |
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