Effects of Ta5+ doping on microstructure evolution,dielectric properties and electrical response in CaCu3Ti4O12 ceramics |
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| Authors: | Prasit Thongbai Jutapol Jumpatam Teerapon Yamwong Santi Maensiri |
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| Affiliation: | 1. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand;2. Integrated Nanotechnology Research Center (INRC), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand;3. National Metal and Materials Technology Center (MTEC), Thailand Science Park, Pathumthani, 12120, Thailand;4. School of Physics, Institute of Science, Suranaree University, Nakhon Ratchasima, 30000, Thailand;1. State Key Laboratory Breeding Base of Nonferrous Metals and Specific Materials Processing, Guilin University of Technology, Guilin 541004, China;2. Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, Guilin University of Technology, Guilin 541004, China;3. College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China;4. Laboratoire de sciences de l''Ingénieur pour l''Environment, avenue michel crépeau, 17042 La Rochelle Cédex 01, France;5. Guangxi New Future Information Industry Co., LTD, Beihai 536000, China;1. School of Materials Science and Engineering, Xi''an University of Technology, Xi''an 710048, PR China;2. Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002, PR China;1. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, PR China;2. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, PR China;3. College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, PR China;1. GREMAN, UMR 7341 CNRS, Université François Rabelais, UFR Sciences et Techniques, Parc de Grandmont, 37200 Tours, France;2. SRT Microcéramique, Rue Mons, 41100 Vendôme, France;1. Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2. National Metal and Materials Technology Center (MTEC), Thailand Science Park, Pathumthani 12120, Thailand;3. Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;4. Integrated Nanotechnology Research Center (INRC), Khon Kaen University, Khon Kaen 40002, Thailand;5. School of Physics, Institute of Science, Suranaree University, Nakhon Ratchasima 30000, Thailand |
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| Abstract: | The effects of Ta5+ substitution on the microstructure, electrical response of grain boundary, and dielectric properties of CaCu3Ti4O12 ceramics were investigated. The mean grain size decreased with increasing Ta5+ concentration, which was ascribed to the ability of Ta5+ doping to inhibit grain boundary mobility. This can decrease dielectric constant values. Grain boundary resistance and potential barrier height of CaCu3Ti4O12 ceramics were reduced by doping with Ta5+. This results in enhancement of dc conductivity and the related loss tangent. Influence of charge compensations on microstructure and intrinsic electrical properties of grain boundaries resulting from the effects of replacing Ti4+ with Ta5+ are discussed. The experimental data and variation caused by the substitution of Ta5+ can be described well by the internal barrier layer capacitor model based on space charge polarization at the grain boundaries. |
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