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Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere
Authors:Kwang Joo Kim  Kwang-Young Lim  Young-Wook Kim
Affiliation:1. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;2. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;1. CEA, LITEN, DTBH, F-38054 Grenoble, France;2. CEA, DEN, DMN, SRMA, LTMEX, F-91191 Gif-sur-Yvette, France;1. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;2. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;1. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;2. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;3. Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;4. Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea
Abstract:The influence of Y2O3 addition on electrical properties of β-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC–Y2O3 powder mixtures in nitrogen (N) atmosphere contain Y2O3 clusters segregated between SiC grains. Y2O3 forms a Y–Si-oxycarbonitride phase during sintering by reacting with SiO2 and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of ~10?3 Ω cm and a carrier density of ~1020 cm?3, which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y2O3 content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics.
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