Etching of GaAs substrates to create As-rich surface |
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Authors: | A. Chanda S. Verma C. Jacob |
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Affiliation: | (1) Materials Science Centre, Indian Institute of Technology, Kharagpur, 721 302, India;(2) Institute of Physics, Bhubaneswar, 751 005, India |
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Abstract: | Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF-ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1:1) produce an As-rich surface. Also, none of the etchants except HF-ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions. |
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Keywords: | Etching semi-insulating XPS spectrum |
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